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il710 isoloop is a registered trademark of nve corporation. *u.s. patent numbers 5, 831,426; 6,300,617 and others. rev. v nve corporation 11409 valley view road, eden prairie, mn 55344-3617 phone: (952) 829- 9217 fax: (952) 829-9189 www.isoloop.com ?nve corporation high speed/high temperature digital isolators functional diagram out 1 v oe in 1 il710 truth table v i v oe v o l l l h l h l h z h h z features ? +5 v/+3.3 v cmos / ttl compatible ? high speed: 150 mbps typical (il710s) ? high temperature: ? 40c to +125c (il710t) ? 2500 v rms isolation (1 min.) ? 300 ps typical pulse width distortion (il710s) ? 100 ps typical pulse jitter ? 4 ns typical propagation delay skew ? 10 ns typical propagation delay ? 30 kv/s typical common mode transient immunity ? low emc footprint ? 8-pin msop, soic, and pdip packages ? ul1577 and iec 61010-2001 approved applications ? digital fieldbus ? rs-485 and rs-422 ? multiplexed data transmission ? data interfaces ? board-to-board communication ? digital noise reduction ? operator interface ? ground loop elimination ? peripheral interfaces ? serial communication ? logic level shifting description nve?s il700 family of high-speed digital isolators are cmos devices manufactured with nve?s patented* isoloop ? spintronic giant magnetoresistive (gmr) technology. the il710s is the world?s fastest isolator of its type , with a 150 mbps typical data rate. the symmetric magnetic coupli ng barrier provides a typical propagation delay of only 10 ns and a pulse width distortion as low as 300 ps (0.3 ns), achieving the be st specifications of any isolator. typical transient immunity of 30 kv/ s is unsurpassed. the il710 is ideal for isolating applications such as profibus, rs-485, and rs-422. the il710 is available in 8-pin msop, soic, and pdip packages. standard and s-grade parts are specified over a temperature range of ? 40c to +100c; t-grade parts are specified over a temperature range of ? 40c to +125c.
il710 2 absolute maximum ratings parameters symbol min. typ. max. units test conditions storage temperature t s ? 55 150 c ambient operating temperature (1) il710t t a ? 55 125 135 c supply voltage v dd 1 , v dd 2 ? 0.5 7 v input voltage v i ? 0.5 v dd 1 +0.5 v input voltage v oe ? 0.5 v dd 2 +0.5 v output voltage v o ? 0.5 v dd 2 +0.5 v output current drive i o 10 ma lead solder temperature 260 c 10 sec. esd 2 kv hbm recommended operating conditions parameters symbol min. typ. max. units test conditions ambient operating temperature il710 and il710s il710t t a t a ? 40 ? 40 100 125 c c supply voltage v dd 1 , v dd 2 3.0 5.5 v logic high input voltage v ih 2.4 v dd 1 v logic low input voltage v il 0 0.8 v input signal rise and fall times t ir , t if 1 s insulation specifications parameters symbol min. typ. max. units test conditions creepage distance msop 3.01 mm soic 4.04 mm pdip 7.04 mm leakage current (5) 0.2 a 240 v rms , 60 hz barrier impedance (5) >10 14 ||3 ? || pf package characteristics parameters symbol min. typ. max. units test conditions capacitance (input?output) (5) c i ? o 1.1 pf f = 1 mhz thermal resistance msop jc 168 c/w soic jc 144 c/w pdip jc 54 c/w thermocouple at center underside of package package power dissipation p pd 150 mw f = 1 mhz, v dd = 5 v safety and approvals iec61010-1 tuv certificate numbers: n1502812, n1502812-101 classification as reinforced insulation model package pollution degree material group max. working voltage il710-1 msop ii iii 150 v rms il710-2 pdip ii iii 300 v rms il710-3 soic ii iii 150 v rms ul 1577 component recognition program file number: e207481 rated 2500v rms for 1 minute soldering profile per jedec j-std-020c, msl=2
il710 3 il710 pin connections 1 v dd1 supply voltage 2 in data in 3 nc no internal connection 4 gnd 1 ground return for v dd1 5 gnd 2 ground return for v dd2 6 out data out 7 v oe output enable. internally held low with 100 k ? 8 v dd2 supply voltage v dd1 v dd2 in v oe nc out gnd 1 gnd 2 il710 timing diagram legend t plh propagation delay, low to high t phl propagation delay, high to low t pw minimum pulse width t plz propagation delay, low to high impedance t pzh propagation delay, high impedance to high t phz propagation delay, high to high impedance t pzl propagation delay, high impedance to low t r rise time t f fall time
il710 4 3.3 volt electrical specifications electrical specifications are t min to t max unless otherwise stated. parameters symbol min. typ. max. units test conditions dc specifications input quiescent supply current i dd1 8 10 a output quiescent supply current il710 and il710s il710t i dd2 1.7 3.3 2 4 ma logic input current i i ? 10 10 a v dd ? 0.1 v dd i o = ? 20 a, v i = v ih logic high output voltage v oh 0.8 x v dd 0.9 x v dd v i o = ? 4 ma, v i = v ih 0 0.1 i o = 20 a, v i = v il logic low output voltage v ol 0.5 0.8 v i o = 4 ma, v i = v il switching specifications maximum data rate il710 and il710t il710s 100 130 110 140 mbps mbps c l = 15 pf c l = 15 pf pulse width (7) pw 10 7.5 ns 50% points, v o propagation delay input to output (high to low) t phl 12 18 ns c l = 15 pf propagation delay input to output (low to high) t plh 12 18 ns c l = 15 pf propagation delay enable to output (high to high impedance) t phz 3 5 ns c l = 15 pf propagation delay enable to output (low to high impedance) t plz 3 5 ns c l = 15 pf propagation delay enable to output (high impedance to high) t pzh 3 5 ns c l = 15 pf propagation delay enable to output (high impedance to low) t pzl 3 5 ns c l = 15 pf pulse width distortion (2) il710 and il710t il710s pwd 2 1 3 3 ns c l = 15 pf pulse jitter (8) t j 100 ps c l = 15 pf propagation delay skew (3) t psk 4 6 ns c l = 15 pf output rise time (10%?90%) t r 2 4 ns c l = 15 pf output fall time (10%?90%) t f 2 4 ns c l = 15 pf common mode transient immunity (output logic high or logic low) (4) |cm h |,|cm l | 20 30 kv/s v cm = 300 v dynamic power consumption (6) 140 240 a/mhz
il710 5 5 volt electrical specifications electrical specifications are t min to t max unless otherwise stated. parameters symbol min. typ. max. units test conditions dc specifications input quiescent supply current i dd1 10 15 a output quiescent supply current il710 and il710s il710t i dd2 2.5 5 3 6 ma logic input current i i ? 10 10 a v dd ? 0.1 v dd i o = ? 20 a, v i = v ih logic high output voltage v oh 0.8 x v dd 0.9 x v dd v i o = ? 4 ma, v i = v ih 0 0.1 i o = 20 a, v i = v il logic low output voltage v ol 0.5 0.8 v i o = 4 ma, v i = v il switching specifications maximum data rate il710 and il710t il710s 100 130 110 150 mbps mbps c l = 15 pf c l = 15 pf pulse width (7) pw 10 7.5 ns 50% points, v o propagation delay input to output (high to low) t phl 10 15 ns c l = 15 pf propagation delay input to output (low to high) t plh 10 15 ns c l = 15 pf propagation delay enable to output (high to high impedance) t phz 3 5 ns c l = 15 pf propagation delay enable to output (low to high impedance) t plz 3 5 ns c l = 15 pf propagation delay enable to output (high impedance to high) t pzh 3 5 ns c l = 15 pf propagation delay enable to output (high impedance to low) t pzl 3 5 ns c l = 15 pf pulse width distortion (2) il710 and il710t il710s pwd 2 0.3 3 3 ns c l = 15 pf propagation delay skew (3) t psk 4 6 ns c l = 15 pf output rise time (10%?90%) t r 1 3 ns c l = 15 pf output fall time (10%?90%) t f 1 3 ns c l = 15 pf common mode transient immunity (output logic high or logic low) (4) |cm h |,|cm l | 20 30 kv/s v cm = 300 v dynamic power consumption (6) 200 340 a/mhz notes (apply to both 3.3 v and 5 v specifications): 1. absolute maximum ambient operating temperature means the device will not be damaged if operated under these conditions. it d oes not guarantee performance. 2. pwd is defined as |t phl ? t plh |. %pwd is equal to pwd divided by pulse width. 3. t psk is the magnitude of the worst-case difference in t phl and/or t plh between devices at 25c. 4. cm h is the maximum common mode voltage slew rate that can be sustained while maintaining v o > 0.8 v dd 2 . cm l is the maximum common mode input voltage that can be sustained while maintaining v o < 0.8 v. the common mode voltage slew rates apply to both rising and falling common mode voltage edges. 5. device is considered a tw o terminal device: pins 1?4 s horted and pins 5?8 shorted. 6. dynamic power consumption is calculated per channel a nd is supplied by the channel?s input side power supply. 7. minimum pulse width is the minimum value at which specified pwd is guaranteed. 8. 66,535-bit pseudo-random binary signal (prbs) nrz bit pattern w ith no more than five consecutiv e 1s or 0s; 800 ps transition time.
il710 6 80 ns application information electrostatic discharge sensitivity this product has been tested for electrostatic sensitivity to the limits stated in the specifications. however, nve recommends that all integrated circuits be handled with appropriate care to avoid damage. damage caused by inappropr iate handling or storage could range from performance degradation to complete failure. electromagnetic compatibility isoloop isolators have the lowest emc footprint of any isolation technology. isoloop isolators? wh eatstone bridge configuration and differential magnetic field signaling ensure excellent emc performance against all relevant standards. these isolators are fully compliant with generic emc standards en50081, en50082-1 and the umbrella line-voltage standard for information technology equipment (ite) en61000. nve has completed compliance tests in the categories below: en50081-1 residential, commercial & light industrial methods en55022, en55014 en50082-2: industrial environment methods en61000-4-2 (esd), en61000-4-3 (electromagnetic field immunity), en61000-4-4 (electrical transient immunity), en61000-4-6 (rfi immunity), en61000-4-8 (power frequency magnetic field immunity), en61000-4-9 (pulsed magnetic field), en61000-4-10 (damped oscillatory magnetic field) env50204 radiated field from digital telephones (immunity test) immunity to external magnetic fiel ds is even higher if the field direction is ?end-to-end? rather than to ?pin-to-pin? as shown in the diagram below: cross-axis field direction dynamic power consumption isoloop isolators achieve their low power consumption from the way they transmit data across the isolation barrier. by detecting the edge transitions of the input logic signal and converting these to narrow current pulses, a magnetic field is created around the gmr wheatstone bridge. depending on th e direction of the magnetic field, the bridge causes the output comparator to switch following the input logic signal. since the current pulses are narrow, about 2.5 ns, the power consumption is independent of mark-to-space ratio and solely dependent on frequency. this has obvious advantages over optocouplers, wh ich have power consumption heavily dependent on mark-to-space ratio. power supply decoupling both power supplies to these devi ces should be decoupled with low esr 47 nf ceramic capacitors . ground planes for both gnd 1 and gnd 2 are highly recommended for data rates above 10 mbps. capacitors must be located as close as possible to the v dd pins. signal status on start-up and shut down to minimize power dissipation, input signals are differentiated and then latched on the output side of th e isolation barrier to reconstruct the signal. this could result in an ambiguous output state depending on power up, shutdown and power loss sequencing. therefore, the designer should consider including an initialization signal in the start-up circuit. initia lization consists of toggling the input either high then low, or low then high. data transmission rates the reliability of a transmission system is directly related to the accuracy and quality of the transmitted digital information. for a digital system, those parameters which determine the limits of the data transmission are pulse widt h distortion and propagation delay skew. propagation delay is the time taken for the signal to travel through the device. this is usually di fferent when sending a low-to-high than when sending a high-to-low signal. this difference, or error, is called pulse width distortion (pwd ) and is usually in nanoseconds. it may also be expressed as a percentage: pwd% = maximum pulse width distortion (ns) x 100% signal pulse width (ns) for example, with data rates of 12.5 mbps: pwd% = 3 ns x 100% = 3.75% this figure is almost three times better than any available optocoupler with the same temperature range, and two times better than any optocoupler regardless of published temperature range. isoloop isolators exceed the 10% maximum pwd recommended by profibus, and will run to near ly 35 mb within the 10% limit. propagation delay skew is the signal propagation difference between two or more channels. th is becomes significant in clocked systems because it is undesirable for the clock pulse to arrive before the data has settled. s hort propagation delay skew is therefore especially critical in high data rate parallel systems for establishing and maintaining accu racy and repeatability. worst- case channel-to-channel skew in an il700 isolator is only 3 ns, which is ten times better than any optocoupler. il700 isolators have a maximum propagation dela y skew of 6 ns, which is five times better than any optocoupler.
il710 7 application diagrams isolated profibus / rs-485 isolation boundary il710 il710 il710 isl8485 nve offers a unique line of profibus/rs-485 tr ansceivers, but il710 isolators can also be used as part of multi-chip designs us ing non- isolated profibus transceivers. n ote: v dd 1 and v iso should be decoupled with 10 nf ceramic capacitors at il710 supply pins. rs-485 truth table txd rts a b rxd 1 0 z z x 0 0 z z x 1 1 1 0 1 0 1 0 1 0
il710 8 isolated usb +3.3v net2890 uspb usbm usboe iso_usb+ iso_usb- 3 4 27 r1 1.5k power supplied by usb bus power this side of isolation boundary all power supplied by usb node?s external supply on this side of isolation boundary 5 x il710 isolation boundary in this circuit, power is supplied by us b bus power on one side of the isolation barrier, and the usb node?s external supply on the other side of the barrier. il700 isolators are specified with just 3 ns worst-case pulse width distortion.
il710 9 package drawings, dimensions and specifications 8-pin msop 0.114 (2.90) 0.114 (2.90) 0.016 (0.40) 0.005 (0.13) 0.009 (0.23) 0.027 (0.70) 0.010 (0.25) 0.028 (0.70) 0.002 (0.05) 0.043 (1.10) 0.032 (0.80) 0.006 (0.15) 0.016 (0.40) 0.024 (0.60) 0.189 (4.80) 0.197 (5.00) 0.122 (3.10) 0.122 (3.10) 6? 0? pin spacing is a basic dimension; tolerances do not accumulate note: 8-pin soic package 0.013 (0.33) 0.020 (0.50) 0.189 (4.8) 0.197 (5.0) 0.150 (3.8) 0.157 (4.0) dimensions in inches (mm) 3 2 1 0.228 (5.8) 0.244 (6.2) 0.008 (0.19) 0.010 (0.25) 0.010 (0.25) 0.020 (0.50) x45o 0o 8o 0.016 (0.40) 0.050 (1.27) 0.040 (1.0) 0.060 (1.5) 0.054 (1.37) 0.069 (1.75) 0.004 (0.10) 0.010 (0.25) pin spacing is a basic dimension; tolerances do not accumulate note: 8-pin pdip 0.36 (9.0) 0.40 (10.2) pin spacing is a basic dimension; tolerances do not accumulate note: 0.24 (6.1) 0.26 (6.6) 0.29 (6.4) 0.31 (7.9) 0.30 (7.6) 0.37 (9.4) 0.008 (0.2) 0.015 (0.4) 0.030 (0.76) 0.045 (1.14) 0.015 (0.38) 0.023 (0.58) 0.045 (1.14) 0.065 (1.65) 0.09 (2.3) 0.11 (2.8) 0.015 (0.38) 0.035 (0.89) 0.12 (3.05) 0.15 (3.81)
il710 10 ordering information and valid part numbers il 710 t - 3 e tr13 bulk packaging blank = tube tr7 = 7" tape and reel tr13 = 13" tape and reel package blank = 80/20 tin/lead plating e = rohs compliant package type -1 = msop -2 = pdip -3 = 0.15" 8-pin soic grade blank = standard t = high temperature s = high speed base part number 710 = single channel product family il = isolators valid part numbers il710-1e il710s-1e il710t-1e il710-2 IL710T-2 il710-2e IL710T-2e il710-3 il710s-3 il710t-3 il710-3e il710s-3e il710t-3e all msop and soic parts are available on tape and reel. rohs compliant
il710 11 isb-ds-001-il710-v september 2010 changes ? additional changes to msop pin spacing on package drawing. isb-ds-001-il710-u changes ? changed msop pin spacing on package drawing. isb-ds-001-il710-t changes ? added typical jitter specification at 5v. isb-ds-001-il710-s changes ? added emc details. isb-ds-001-il710-r changes ? iec 61010 approval for msop version. isb-ds-001-il710-q changes ? added magnetic immunity to 3.3 and 5 volt electrical specifications. ? added diagram showing cross-axis direction. ? added magnetic compatibility to the applications information section. isb-ds-001-il710-p changes ? note on all package drawings that pin-sp acing tolerances are non-accumulating; change msop pin-spacing dimensions and tolerance accordingly. isb-ds-001-il710-o changes ? corrected pwd spec. on isolated usb application diagram (p. 8). ? changed lower limit of length on pdip package drawing and tightened pin-spacing tolerance on msop package drawing (p. 9). isb-ds-001-il710-n changes ? changed il710t output quiescent supply current specifications. isb-ds-001-il710-m changes ? changed ordering information to reflect that devices are now fully rohs compliant with no exemptions. isb-ds-001-il710-l changes ? eliminated soldering profile chart isb-ds-001-il710-k changes ? edited profibus application isb-ds-001-il710-j changes ? msop package, s- and t-grades added ? order information updated isb-ds-001-il710-i changes ? added msop specifications ? updated ul and iec numbers
il710 12 about nve an iso 9001 certified company nve corporation manufactures innovative products based on uni que spintronic giant magnetoresistive (gmr) technology. products include magnetic field sensors, magnetic field gradie nt sensors (gradiometers), digital magnetic field sensors, digital signal isolators, and isolated bus transceivers. nve pioneered spintronics and in 1994 introduced the world?s first products using gmr material, a line of ultra-precise magneti c sensors for position, magnetic media, gear speed and current sensing. nve corporation 11409 valley view road eden prairie, mn 55344-3617 usa telephone: (952) 829-9217 fax: (952) 829-9189 internet: www.nve.com e-mail: isoinfo@nve.com the information provided by nve corpor ation is believed to be accurate. however, no responsibility is assumed by nve corporation for its use, nor for any infringement of patents, nor rights or licenses granted to third parties, which may result from its use. no license is granted by implication, or otherwise, under any patent or patent rights of nve corporation. nve corporation does not authorize, nor warrant , any nve corporation product for use in life support devices or systems or other critical applications, without the express written appr oval of the president of nve corporation. specifications are subject to change without notice. isb-ds-001-il710-v september 2010

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